HIGHLIGHTING OF TWO TYPES OF DEFECTS IN 1300nm PBC LASER DIODES

摘要

Laser diodes of PBC (p-substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro-optical characteristics has highlighted two types of complementary defects: (ⅰ) a so-called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ⅱ) a so-called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).