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SUPPRESSION OF NON-RADIATIVE PROCESSES IN SEMICONDUCTOR MID-INFRARED EMITTERS AND DETECTORS

机译:半导体中红外辐射器和探测器中非辐射过程的抑制

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We review the methods that have been used for suppressing non-radiative processes in mid-infrared (MIR) semiconductor lasers and detectors. Specifically we discuss the results of techniques that have been used recently to minimise the deleterious effect of Auger recombination processes in interband detectors and (bi-polar lasers, and of phonon scattering in quantum well photodetectors (QWIPs) and quantum cascade (QC) lasers. After summarising the theory of the suppression of Auger and phonon processes in these devices, sections are devoted to specific III-V, II-VI and lead salt materials systems; further sections are devoted to subband detectors, subband cascade lasers, interband cascade lasers and to non-equilibrium devices from the InSb and HgCdTe systems.
机译:我们回顾了用于抑制中红外(MIR)半导体激光器和探测器中非辐射过程的方法。具体来说,我们讨论了最近用于最小化带间检测器和(双极激光器)中俄歇复合过程的有害影响以及量子阱光电检测器(QWIP)和量子级联(QC)激光器中声子散射的技术效果的结果。在总结了这些设备中抑制俄歇和声子过程的理论之后,本节专门讨论了特定的III-V,II-VI和铅盐材料系统;其他部分则专门讨论了子带检测器,子带级联激光器,带间级联激光器和到InSb和HgCdTe系统的非平衡设备。

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