Welcome to The Nanotechnology Era

摘要

When highvolume production of 90 nm channel length transistors began last year, semiconductor technology officially entered the nan-otechnology era. Coincidentally, Hyperion Catalysts' multiwalled carbon nanotubes may be critical in protecting such parts from the potential destruction from electrostatic discharge (ESD). As device feature sizes and gate oxide thicknesses shrink, sensitivity to ESD will increase. Less than 5 V across a 90 nm gate will result in destruction. If you touch an electronic product anywhere in its lifecycle, you may take a yield hit unless you carefully control ESD.