Electrical properties of a-Ge_xSe_(100-x)

摘要

In general, the conductivity in chalcogenide glasses at higher temperatures is dominated by band conduction (DC conduction). But, at lower temperatures, hopping conduction dominates over band conduction. A study at lower temperature can, eventually, provide useful information about the conduction mechanism and the defect states in the material. Therefore, the study of electrical properties of Ge_xSe_(100-x) in the lower temperature region (room temperature) is interesting. Temperature and frequency dependence of Ge_xSe_(100-x) (x = 15, 20 and 25) have been studied over different range of temperatures and frequencies. An agreement between experimental and theoretical results suggested that the behaviour of germanium selenium system (Ge_xSe_(100-x)) have been successfully explained by correlated barrier hopping (CBH) model.