JEDEC-Qualified 600 Volt GaN on Silicon Power Devices

摘要

The total gantm family of GaN (Gallium Nitride) on silicon transistors and diodes from Transphorm Inc. is reportedly the first JEDEC-qualified 600 V GaN device platform. Based on Transphorm's patented, high-performance EZ-GaNTM technology, the TPH3006PS GaN high electron mobility transistor (HEMT) combines low switching and conduction losses to reduce energy loss by 50 percent compared to conventional silicon-based power conversion designs. The TO-220-packaged GaN transistor features low on-state resistance (RDS(on)) of 150 milliohms (mQ), low reverse-recovery charge (Qrr) of 54 nanocoulombs (nC) and high-frequency switching capability - all of which result in more compact, lower cost systems.