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机译:具有异质结二极管的SiC沟槽MOSFET具有低开关损耗和高短路能力
Fuji Elect Co Ltd Dev Div Device Dev Dept 4-18-1 Tsukama Matsumoto Nagano 3900821 Japan;
Chongqing Univ Minist Educ Key Lab Dependable Serv Comp Cyber Phys Soc Chongqing 400044 Peoples R China|Chongqing Univ Coll Commun Engn Chongqing Engn Lab High Performance Integrated Ci Chongqing 400044 Peoples R China;
wide band gap semiconductors; MOSFET; silicon compounds; semiconductor heterojunctions; semiconductor diodes; failure analysis; semiconductor device reliability; gate oxide layer; gate oxide corner; switching losses; short-circuit capability; low switching loss; merged heterojunction diode; parasitic body diode; conventional silicon carbide trench MOSFET; grounded P plus shield layer; numerical analysis; electric field concentration; breakdown voltage; Miller charge; failure mechanism; fabrication procedure; SiC;
机译:一种新型 的4H-SiC 超级结 UMOSFET 与 异质结 二极管 的 增强型反向 恢复 特性和低 开关损耗
机译:不对称和双沟SIC MOSFET的短路能力预测和故障模式
机译:具有集成沟通MOS屏障肖特基二极管的低损耗单通道SIC沟MOSFET
机译:器件设计实现SIC沟通MOSFET的低损耗和高短路能力
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:异结二极管屏蔽SIC分流栅极沟槽MOSFET,具有优化的反向恢复特性和低开关损耗