A Process for Fabricating High Current Circuits With High interconnect Density

摘要

Currently there is no cost-effective technology available for fabricating copper interconnect with thickness greater than 4 mils and large cross sectional area. In contrast to the photoresist laminate manufacturer's recommended procedure, a thick photoresist layer was achieved by laminating two layers sequentially on a substrate. Procedures for patterning, developing, and stripping the thick photoresist layer were developed. A process for making greater than 4-mil-thick copper conductors with an aspect ratio of 1:1 in a 10-mil pitch has been developed and its feasibility demonstrated. The new process will offer a significant advantage in designing and producing high-current circuits with high interconnect density, and requiring low conductor resistance for avoiding signal degradation and minimizing power dissipation.