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Experiment and Research of Energy Depositing Rate of Exploding Wires Under Different Initial Capacitor Voltages for Thin Film Production

机译:薄膜生产中不同初始电容器电压下爆炸线能量沉积率的实验研究

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Thin film produced by exploding wires is affected by many factors; one of such factors is the energy depositing rate. The research in this paper focused on measuring the voltage and current of an exploding copper wire that was 15 cm long and 0.3 mm in diameter. The time-dependent wire resistance and the energy deposited into the wire were deduced from the measured voltage and current, and the maximum wire resistance was observed at the time when part of the wire mass was heated up to the boiling point, which was called critical time and critical point, respectively. From the experiment, the following statements could be surmised: The maximum wire resistance increases from about 224.4 to 266.1 $hbox{m}Omega$, and the critical time reduces from about 8.8 to 7.2 $muhbox{s}$ when the initial capacitor voltage changes from 10 to 20 kV, as well as the fact that the mean energy depositing rate varies from about 13.3 to 27.6 $hbox{J}/muhbox{s}$ before the critical point. Also, thin copper film is prepared by this method under initial capacitor voltages of 10, 15, and 20 kV, respectively. The SEM micrographs of the film samples are also presented and analyzed. This result demonstrates that a faster energy depositing rate can help to heat up the wire mass more uniformly and more wire mass would evaporate before the critical time to create a greater wire resistance at the critical point, and the film surface is more uniform and has less void fraction.
机译:电线爆炸产生的薄膜受许多因素影响;这些因素之一是能量沉积率。本文的研究重点是测量爆炸的铜线的电压和电流,该铜线长15厘米,直径0.3毫米。由测得的电压和电流得出随时间变化的导线电阻和沉积到导线中的能量,并且在部分导线团被加热到沸点时观察到最大导线电阻,这称为临界值。时间和临界点。从实验中可以得出以下结论:当初始电容器电压达到最大值时,最大导线电阻从约224.4增加到266.1 $ hbox {m}Ω,临界时间从大约8.8减少到7.2 $ muhbox {s} $。从10 kV变到20 kV,以及平均能量沉积速率在临界点之前从大约13.3到27.6 $ hbox {J} / muhbox {s} $变化。而且,通过该方法分别在初始电容器电压10、15和20kV下制备铜薄膜。还介绍并分析了薄膜样品的SEM显微照片。该结果表明,更快的能量沉积速率可以帮助更均匀地加热线团,并且在临界时间之前会有更多的线团蒸发,从而在临界点处产生更大的线电阻,并且薄膜表面更均匀且具有更少的膜层。空隙率。

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