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Fast Semiconductor Switching Modules for Transformer-Coupled LC Inversion Generators

机译:用于变压器耦合LC反相发生器的快速半导体开关模块

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The recent availability of fast high-power semiconductor switches makes the transformer coupled LC inversion generator (TCLCG) topology a very promising candidate for the realization of reliable, multi-kHz repetition rate pulse generators with an output voltage in the range of 200 kV and more. Usage of 1:1 transformers instead of closing switches in each generator stage reduces the total number of switches inside the TCLCG to only one, independent of the numbers of stages. Thus, problem of synchronization as in Marx-generators or classical LC inversion generators can be omitted. In principle, capacitors are initially charged to the charging voltage, whereas the odd-numbered of each stage are charged with the opposite polarity to the even-numbered capacitors. Fast voltage inversion of the even-numbered capacitors leads to efficient voltage multiplication provided the semiconductor switching module will be sufficiently fast to minimize switching losses. For initial investigations, a special asymmetrically compensated three-stage test TCLCG was designed and set up. Three high-voltage semiconductor switching modules were experimentally tested in detail; two 20-kV high-voltage switching modules consisting of a series arrangement of 15 Si-based insulated gate bipolar transistors or 15 SiC-based MOSFETs, with in each case 1700-V breakdown voltage, and a fast experimental 10-kV thyristor switching module with kilo ampere current carrying capability. The achievable output signal rise time and generator efficiency for different electrical loads (resistive, capacitive, or inductive) are discussed.
机译:快速大功率半导体开关的最新可用性使变压器耦合LC反相发生器(TCLCG)拓扑成为实现输出电压范围在200 kV及更高范围内的可靠,多kHz重复频率脉冲发生器的非常有希望的候选者。在每个发电机级中使用1:1变压器代替闭合开关会将TCLCG内部的开关总数减少到一个,与级数无关。因此,可以省略马克​​思发生器或经典LC反转发生器中的同步问题。原则上,首先将电容器充电至充电电压,而每级的奇数则以与偶数电容器相反的极性充电。如果半导体开关模块足够快以最小化开关损耗,则偶数电容器的快速电压反转将导致有效的电压倍增。为了进行初步研究,设计并建立了一个特殊的不对称补偿三阶段测试TCLCG。对三个高压半导体开关模块进行了详细的实验测试;两个20 kV高压开关模块,包括串联排列的15个基于Si的绝缘栅双极晶体管或15个SiC MOSFET,分别具有1700 V的击穿电压,以及一个快速的实验性10 kV晶闸管开关模块具有千安培的电流承载能力。讨论了不同电气负载(电阻,电容或电感)可实现的输出信号上升时间和发生器效率。

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