Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates

Hisashi Yamada; Kenji Iso; Makoto Saito; Hirohiko Hirasawa; Natalie Fellows; Hisashi Masui; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura

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Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates

机译：在m面和a面体GaN衬底上生长的InGaN / GaN发光二极管的比较

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InGaN/GaN-based light emitting diodes (LEDs) grown on m-plane, α-plane and off-axis between m- and α-plane GaN bulk substrates were investigated. A smooth surface was obtained when α-plane substrate was applied; however, large amounts of defects were obse

机译：研究了生长在m平面，α平面和m平面与α平面GaN块状衬底之间的轴外和轴外的InGaN / GaN基发光二极管（LED）。当施加α面基板时，获得光滑的表面；但是，观察到大量缺陷

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《Physica status solidi》 |2008年第2期|89-91|共3页
作者
Hisashi Yamada; Kenji Iso; Makoto Saito; Hirohiko Hirasawa; Natalie Fellows; Hisashi Masui; Kenji Fujito; James S. Speck; Steven P. DenBaars; Shuji Nakamura;
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正文语种 eng
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visible and ultraviolet sources; Ⅲ-Ⅴ semiconductors; light-emitting devices;

机译：可见光和紫外线源;Ⅲ-Ⅴ族半导体;发光装置;

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1. Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate [J] . Hisashi Masui, Arpan Chakraborty, Benjamin A. Haskell, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2005,第42a45期

机译：生长在块状m面GaN衬底上的非极性InGaN发光二极管的偏振光发射
2. High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate [J] . Kenji Iso, Hisashi Yamada, Hirohiko Hirasawa, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第a36a40aPt2期

机译：非极性m面体GaN衬底上的高亮度蓝色InGaN / GaN发光二极管
3. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates [J] . Farrell R. M., Haeger D. A., Fujito K., Journal of Applied Physics . 2013,第6期

机译：在独立m面GaN衬底上生长的InGaN / GaN发光二极管的形态演变
4. A yellow emitting InGaN/GaN nanowires-based light emitting diode grown on scalable quartz substrate [C] . Aditya Prabaswara, Tien Khee Ng, Chao Zhao, Conference on Lasers and Electro-Optics . 2017

机译：在可缩放石英衬底上生长的基于黄光的InGaN / GaN纳米线的发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

机译：在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
7. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates [O] . Liu B., Zhang R., Xie Z. L., 2007

机译：LiAlO2（100）衬底上的非极性m平面薄膜GaN和InGaN / GaN发光二极管

Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates

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