首页> 外文期刊>Physical Review. B, Condensed Matter >Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states
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Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

机译:表面离子筛选对铁电薄膜极化反转场景的影响:从铁杉的交叉分流

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摘要

Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigate the role of the surface ion formation energy on the polarization states and its reversal mechanisms, domain structure, and corresponding phase diagrams of ferroelectric thin films. Using 3D finite element modeling, we analyze the distribution and hysteresis loops of ferroelectric polarization and ionic charge, and the dynamics of the domain states. These calculations performed over large parameter space delineate the regions of single- and polydomain ferroelectric, ferroionic, antiferroionic, and nonferroelectric states as a function of surface ion formation energy, film thickness, applied voltage, and temperature. We further map the analytical theory for 1D systems onto an effective Landau-Ginzburg free energy and establish the correspondence between the 3D numerical and 1D analytical results. This approach allows us to perform an overview of the ferroionic system phase diagrams and explore the specifics of polarization reversal and domain evolution phenomena.
机译:电化学性质和铁电偶极子的表面离子之间的非线性静电相互作用导致纳米级铁电解的偶联的铁杉状态。这里,我们研究了表面离子形成能量对偏振状态的作用及其反转机制,域结构和铁电薄膜的相应相图。使用3D有限元建模,我们分析铁电偏振和离子电荷的分布和滞后环,以及域状态的动力学。这些计算在大型参数空间中表现了作为表面离子形成能量,薄膜厚度,施加的电压和温度的函数的单一和多块铁料,铁源性,脱氧源性和非传热状态的计算。我们进一步将1D系统的分析理论映射到有效的Landau-Ginzburg自由能量,并在3D数值和1D分析结果之间建立了对应关系。这种方法使我们能够概述Ferroionic System相图,并探索极化反转和域演化现象的细节。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2017年第24期|245405.1-245405.14|共14页
  • 作者单位

    Institute of Physics National Academy of Sciences of Ukraine pr. Nauky 46 03028 Kyiv Ukraine Bogolyubov Institute for Theoretical Physics National Academy of Sciences of Ukraine 14-b Metrolohichna str. 03680 Kyiv Ukraine;

    Institute for Problems of Materials Science National Academy of Sciences of Ukraine Krjijanovskogo 3 03142 Kyiv Ukraine;

    V.Lashkariov Institute of Semiconductor Physics National Academy of Sciences of Ukraine pr. Nauky 41 03028 Kyiv Ukraine$;

    Institute of Physics National Academy of Sciences of Ukraine pr. Nauky 46 03028 Kyiv Ukraine;

    The Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

    V.Lashkariov Institute of Semiconductor Physics National Academy of Sciences of Ukraine pr. Nauky 41 03028 Kyiv Ukraine$ Taras Shevchenko Kyiv National University Radiophysical Faculty pr. Akademika Hlushkova 4g 03022 Kyiv Ukraine;

    The Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA;

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