机译:通过偏压依赖射击噪声测量研究了AS / GAAS的旋转二极管的(GA,MN)的隧道机制
Graduate School of Science Osaka University Toyonaka Japan Center for Spintronics Research Network Osaka University Toyonaka Japan;
Institute for Materials Research Tohoku University Sendai Japan;
Graduate School of Science Osaka University Toyonaka Japan;
Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;
Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;
Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;
Graduate School of Science Osaka University Toyonaka Japan Center for Spintronics Research Network Osaka University Toyonaka Japan;
Department of Materials Science Tohoku University Sendai Japan Center for Spintronics Research Network Tohoku University Sendai Japan Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies Tohoku University Sendai Japan;
Department of Materials Science Tohoku University Sendai Japan Center for Spintronics Research Network Tohoku University Sendai Japan Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies Tohoku University Sendai Japan;
Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;
Institute of Experimental and Applied Physics University of Regensburg D-93040 Regensburg Germany;
Graduate School of Science Osaka University Toyonaka Japan Institute for Physics of Intelligence and Department of Physics The University of Tokyo Tokyo Japan;
机译:通过偏压依赖射击噪声测量研究了AS / GAAS的旋转二极管的(GA,MN)的隧道机制
机译:具有(Ga,Mn)As / GaAs自旋Esaki二极管触点的横向自旋注入器件中的隧道磁阻和自旋极化的面内各向异性
机译:横向(Ga,Mn)As / GaAs自旋Esaki二极管器件中的隧道各向异性自旋极化
机译:重掺杂低维硅Esaki二极管的带间隧穿中的库仑势垒电荷传输机制
机译:多个量子阱共振隧穿二极管中散粒噪声的增强和抑制。
机译:Si上基于GaAs的谐振隧穿二极管(RTD)外延用于高度敏感的应变仪应用
机译:横向(Ga,Mn)As / GaAs自旋Esaki二极管器件中的隧道各向异性自旋极化