机译:拓扑绝缘体在光发射中的广泛自旋极化效应
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics,Stanford University, Stanford, California 94305, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics,Stanford University, Stanford, California 94305, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Physics, University of California, Berkeley, California 94720, USA;
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics,Stanford University, Stanford, California 94305, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Physics, University of California, Berkeley, California 94720, USA,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road,Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics,Stanford University, Stanford, California 94305, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Physics, University of California, Berkeley, California 94720, USA;
electron states at surfaces and interfaces; photoemission and photoelectron spectra;
机译:Bi_2Te_3(0001)拓扑绝缘体中的光电子自旋极化:光发射过程中的初始状态和最终状态效应
机译:拓扑绝缘体中费米表面翘曲与面外自旋极化之间的关系:自旋和角度分辨光发射的视角
机译:使用角度分辨光发射光谱学的拓扑绝缘体Bi_2Se_3的电子结构:几乎全表面自旋极化的证据
机译:硅丙烯的拓扑绝缘体:量子大厅,量子旋转厅和量子异常霍尔效应
机译:新型拓扑绝缘子类别的光发射研究:铋-X3拓扑绝缘子类别的实验发现。
机译:拓扑绝缘体中电流引起的长寿命持续自旋极化的观察:可充电自旋电池
机译:来自拓扑绝缘体的光发射中广泛的自旋极化效应
机译:拓扑绝缘子光发射中广泛的自旋极化效应。