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Anderson localization and topological transition in Chern insulators

机译:陈绝缘子的安德森局部化和拓扑转变

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摘要

We analyze the topological transition and localization evolution of disordered two-dimensional systems with nontrivial topology based on bipartite lattices. Chern insulators with broken time-reversal symmetry show nonstandard behavior for disorder realizations selectively distributed on only one of the sublattices. The Chern number survives to a much stronger disorder strength (one order of magnitude higher) than in the equally distributed disordered case, and the final state in the strongly disordered case is metallic.
机译:我们分析了基于二分格子的具有非平凡拓扑的无序二维系统的拓扑转变和局部演化。具有时间逆转对称性破坏的Chern绝缘子显示出非标准行为,用于选择性地仅分布在一个子晶格上的无序实现。相较于均匀分布的无序情况,Chern数可以维持到更高的无序强度(高一个数量级),并且在无序情况下的最终状态是金属。

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