Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

摘要

The band offsets and subband levels in a double quantum well layer for a 660nm-Ga_(0.4)In_(0.6)P/(Al_(0.5)Ga_(0.5))_(0.5)In_(0.5)P quantum well laser are determined by photoreflectance using a 410 ran InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical cal-rnculation of the Schrodinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5±0.03.