Fabrication and characterization of air-stable, ambipolar heterojunction-based organic light-emitting field-effect transistors

摘要

We present our first application of the neutral cluster beam deposition (NCBD) method to fabricate bilayer heterojunction-based organic light-emitting field-effect transistors (OLEFETs) by superimposing two layers of α,ω-dihexylsexithiophene (DH6T) and N,N'-dit-ridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) successively. Based upon well-balanced ambipolarity (hole and electron field-effect mobilities of 2.22 × 10~(-2) and 2.78 × 10~(-2)cm~2/Vs), the air-stable OLEFETs have demonstrated good field-effect characteristics, stress-free operational stability and electroluminescence under ambient condition.