Self-heating effects in organic semiconductor crossbar structures with small active area

摘要

We studied the influence of heating effects in an organic device containing a layer sequence of n-doped/intrinsic-doped C_(60) between crossbar metal electrodes. These devices give a perfect setting for studying the heat transport at high power densities because C_(60) can withstand temperatures above 200 ℃. Infrared images of the device and detailed numerical simulations of the heat transport suggest that the electrical circuit produces a combination of homogeneous power dissipation in the active volume and strong heat sources localized at the contact edges. Hence, close to the contact edges, the current density is significantly enhanced with respect to the central region of the device, demonstrating that three-dimensional effects have a strong impact on a device with seemingly one-dimensional current transport.