High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20 MHz

摘要

Three-dimensional organic transistors (3D-OFETs) comprising vertical short channels are developed to raise the operational speed of organic transistors. The devices with a short-channel length of 0.8 urn and reduced parasitic capacitance operate at up to 20 MHz with an applied drain voltage of -15 V. Organic rectifiers based on the diode-connected 3D-0FETS are also demonstrated to operate at above 20 MHz, even with an applied effective voltage of about 4 V, which is higher than the speed of radio frequency identification tags of 13.56 MHz required in near field communication. These techniques boost the performance of organic transistors and can help to realize the breakthrough for practical applications of organic logic circuits used as key components in various flexible or plastic devices.