Enhanced photovoltaic performance in inverted polymer solar cells using Li ion doped ZnO cathode buffer layer

摘要

We have proposed an approach to improve the photovoltaic performance of inverted polymer solar cells (i-PSC) using lithium ion doped ZnO (Li-ZnO) as cathode buffer layer (CBL). The Li-ZnO CBL was prepared using the diffusion technique, performed by inducing the Li ion of 8-hydroxyquinolatolithium (Liq) to diffuse into ZnO film through annealing the bi-layer ZnO/Liq film. Doping concentration of Li ion was controlled by using various thickness of Liq film and annealing temperature. Based on Li-ZnO CBL, the poly (3-hexylthiophene) [6,6]:-phenyl C61-butyric acid methyl ester (P3HT:PCBM) i-PSC device possessed a optimal power conversion efficiency (PCE) of 4.07%, which was 30% improved than that of the device with neat ZnO as CBL. The enhancement of the device performance could be attributed to the enhanced electron mobility and better band matching of the Li-ZnO CBL. Our finding indicates that the Li-ZnO film fabricated with relatively low temperature treatment has great potential for high-performance i-PSCs.