Organic quantum wells with multiple negative differential resistance peaks and its photoswitch effect

摘要

Organic optoelectronic devices have experienced great progress in recent decades. However, quantum well has long been a challenge for organic semiconductors due to the weak intermolecular interactions, the difficulty of realizing high quality alternate crystalline films. Here, we construct a type Ⅱ organic crystalline quantum well, in which both electron quantum well and hole quantum well show symmetrical and multiple negative differential resistance peaks, respectively. The biueshifts of absorption spectra and the peak voltage decreasing under illumination conditions are observed. Due to high absorption coefficient of organic semiconductors, photoswitch effect by taking advantage of negative differential resistance of organic quantum well, which owns very thin device structure is demonstrated. Our results prove the promising applications of organic quantum wells, which broaden the types of organic optoelectronic devices.