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Simultaneous control of molecular orientation and patterning of small-molecule organic semiconductors for organic transistors

机译:同时控制用于有机晶体管的小分子有机半导体的分子取向和图案

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摘要

Triethylsilylethynyl anthradithiophene (TES-ADT) has been shown to be a promising soluble semiconductor for the active layer of organic field-effect transistors (OFETs) due to its solution processability, chemical stability and excellent electrical properties. However, there are still some problems that need to be resolved for the utilization of TES-ADT in OFETs. One of these problems is a patterning issue to minimize crosstalk between neighboring TES-ADT FETs. To this end, TES-ADT crystals of various shapes need to be patterned at the desired positions. Here, we demonstrated a simple method to fabricate patterned TES-ADT crystals by using a PDMS mold containing 1,2-dichloroethane (DCE) solvent. This method serves the dual purpose of preparing a variety of pattern shapes while simultaneously changing as-spun TES-ADT thin films into crystal patterns. The top-contact OFETs with the TES-ADT crystal patterns exhibited high performance, reaching a field-effect mobility of ~0.3 cm~2 V~(-1)s~(-1).
机译:三乙基甲硅烷基乙炔基蒽噻吩(TES-ADT)由于其溶液的可加工性,化学稳定性和出色的电学性能已被证明是有机场效应晶体管(OFET)有源层的有希望的可溶性半导体。但是,在OFET中使用TES-ADT仍需要解决一些问题。这些问题之一是构图问题,以最大程度地减少相邻TES-ADT FET之间的串扰。为此,需要在期望的位置上对各种形状的TES-ADT晶体进行构图。在这里,我们演示了一种简单的方法,可以通过使用包含1,2-二氯乙烷(DCE)溶剂的PDMS模具来制造带图案的TES-ADT晶体。该方法具有双重目的,即准备各种图案形状,同时将初纺的TES-ADT薄膜更改为晶体图案。具有TES-ADT晶体图案的顶接触式OFET具有较高的性能,场效应迁移率约为0.3 cm〜2 V〜(-1)s〜(-1)。

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