P type copper doped tin oxide thin films and p-n homojunction diodes based on them

摘要

P-type copper doped tin oxide (SnO2:Cu) thin films were prepared by chemical spray pyrolysis method on glass substrates for different doping concentrations. Their structural, optical, surface morphological, elemental and electrical studies were investigated. We fabricated two transparent homojunction diodes using optimized sample of SnO2:Cu which are p- SnO2:Cu/n-SnO2 and p-SnO2:Cu/n- SnO2:F.These diodes are reported for the first time by this method.