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首页> 外文期刊>Optical Materials >Optical properties of sol-gel derived Sr_2SiO_4: Dy~(3+) - Photo and thermally stimulated luminescence
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Optical properties of sol-gel derived Sr_2SiO_4: Dy~(3+) - Photo and thermally stimulated luminescence

机译:溶胶-凝胶衍生的Sr_2SiO_4:Dy〜(3+)的光学性质-光和热激发发光

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摘要

Trivalent dysprosium-doped strontium silicate (Sr_2SiO_4) phosphors were prepared by sol-gel synthesis using tetra ethyl orthosilicate (TEOS) as precursor. The synthesis temperature could be brought down to 600 ℃ for formation of a single phase sample. The material was characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), photoluminescence (PL), and thermally stimulated luminescence (TSL). The luminescence study revealed strong ~4F_(9/2)→ ~6H_(13/2) transition at 577 nm (yellow), strong ~4F_(9/2)→ ~6H_(15/2) transition at 482 nm (blue) and weak ~4F_(9/2)→ ~6H_(11/2) transition at 677 nm (red), when excited by 250 nm (Charge transfer band, CTB) or 352 nm (f-f band). The concentration of the dopant ion and the temperature of annealing were optimized for maximum PL intensity. The critical energy-transfer distance for the Dy~(3+) ions was evaluated based on which, the quenching mechanism was verified to be a multipole-multipole interaction. The thermally stimulated luminescence studies of Sr_2SiO_4:Dy~(3+) sample showed main TSL glow peak at 413 K. The trap parameters namely activation energy (E), order of kinetics (b), and frequency factor (s) for this peak were determined using glow curve shape method.
机译:以原硅酸四乙酯(TEOS)为前驱体,通过溶胶-凝胶法合成了掺valent的三价硅酸锶(Sr_2SiO_4)荧光粉。合成温度可以降低到600℃以形成单相样品。通过X射线衍射(XRD),扫描电子显微镜(SEM),光致发光(PL)和热激发发光(TSL)对材料进行了表征。发光研究显示在577 nm(黄色)处〜4F_(9/2)→〜6H_(13/2)跃迁强,在482 nm(蓝色)处〜4F_(9/2)→〜6H_(15/2)跃迁强)并在被250 nm(电荷转移带,CTB)或352 nm(ff带)激发时在677 nm(红色)处发生弱的〜4F_(9/2)→〜6H_(11/2)跃迁。优化掺杂离子的浓度和退火温度以实现最大PL强度。评估了Dy〜(3+)离子的临界能量转移距离,据此验证了猝灭机理是多极-多极相互作用。 Sr_2SiO_4:Dy〜(3+)样品的热激发发光研究显示,主TSL辉光峰位于413K。陷阱参数为活化能(E),动力学阶数(b)和频率因子(s)。用辉光曲线形状法测定。

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