High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

摘要

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n GaAs substrate. For 3 μm stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to l00 mW, the coupling efficiency is 50/100. We also fabricated l00 μm broad stripe coated lasers with cavity length of 800 μm, a threshold current density of l70 A/cm~2, a high slope efficiency of l.03 W/A and a far-field pattern of 40 x 6~o are obtained. The maximum output power of 3.5 W is also obtained for l00 μm wide coated lasers.