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Modeling of the second harmonic generation in SiO_2 sol-gel films doped with nanoscopic DR1 molecules as function of the poling time

机译:纳米DR1分子掺杂的SiO_2溶胶-凝胶薄膜中二次谐波的生成与极化时间的关系

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摘要

A physical description for the second harmonic generation (SHG) intensity as function of corona poling time in SiO_2:DR1 sol-gel films is shown. This model describes the poling time dependence of the SHG based on a damped oscillator description of the nanomol-ecules of DR1. Instead of an usual biexponential or polynomial model with meaningless parameters, all the parameters from our model have a physical interpretation. The model results have been experimentally verified in several SiO_2:DR1 sol-gel films with different side-chain doping concentrations.
机译:显示了在SiO_2:DR1溶胶-凝胶薄膜中二次谐波产生(SHG)强度随电晕极化时间变化的物理描述。该模型基于DR1纳米分子的阻尼振荡器描述来描述SHG的极化时间依赖性。代替通常的具有无意义参数的双指数或多项式模型,我们模型中的所有参数都具有物理解释。在几种具有不同侧链掺杂浓度的SiO_2:DR1溶胶-凝胶薄膜中通过实验验证了模型结果。

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