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首页> 外文期刊>Optical and quantum electronics >Theoretical modeling of XBn T2SLs InAs/lnAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling
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Theoretical modeling of XBn T2SLs InAs/lnAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling

机译:XBn T2SLs InAs / InAsSb / B-AlSb长波红外探测器在热电冷却下的理论模型

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摘要

The paper reports on the barrier longwave infrared nBnn~+ detector based on InAs/InAsSb (x_(sb) = 0.38) type-II superlattice operating under thermoelectrical cooling (> 190 K). That active layer exhibits cut-off wavelength ~ 10 μm at 230 K. AlSb was proved to minimize barrier in valence band in analysed temperature range and assumed architecture. The highest detectivity of the simulated structure was assessed at the level of~10~9 cm Hz(1/2)~/W at T~230 K assuming immersion contribution. The barrier detector performance was compared to HgCdTe detectors with ~ 10.6 μm cut-off wavelength at 230 K and ~ 13 μm cut-off wavelength at 195 K.
机译:本文报道了基于InAs / InAsSb(x_(sb)= 0.38)II型超晶格的屏障长波红外nBnn〜+检测器,该晶格在热电冷却(> 190 K)下运行。该活性层在230 K时的截止波长约为10μm。在分析的温度范围和假定的体系结构中,AlSb被证明可以最小化价带中的势垒。假定沉浸作用,在T〜230 K时,在〜10〜9 cm Hz(1/2)〜/ W的水平上评估了模拟结构的最高探测灵敏度。将屏障探测器的性能与HgCdTe探测器进行了比较,HGCdTe探测器在230 K时的截止波长约为10.6μm,在195 K时的截止波长约为13μm。

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