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首页> 外文期刊>Optical and quantum electronics >Full-phosphorescence white organic light-emitting diode with high CRI: the exploitation of positive and reverse emitter sequences
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Full-phosphorescence white organic light-emitting diode with high CRI: the exploitation of positive and reverse emitter sequences

机译:具有高CRI的全磷光白色有机发光二极管:正向和反向发射器序列的利用

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摘要

The high color rendering index (CRI) and doping-free four-emitting-layer (EML) white orangic light-emitting diode (WOLED) with bipolar spacer layer was researched by different emitter sequence arrangements (positive emitter sequence: B-G-O-R, reverse emitter sequence: R-O-G-B). The resulting four-emitting-layer WOLEDs with different sequences show opposite CRI trends when voltage increases, which includes the decreased trend in B-G-O-R sequence and increased trend in R-O-G-B sequence. That leads to WOLEDs with different sequences exhibit the highest CRI at obviously distinguishing luminance, which are CRI of 86 @ 531 cd m(-2) in B-G-O-R sequence and CRI of 87 @ 13,340 cd m(-2) in R-O-G-B sequence, respectively. Meanwhile, the B-G-O-R and R-O-G-B sequences devices also exhibit a difference in the power efficiency. The different manifestations of CRI and effeciency characteristics are meticulously analyzed by a combined operation of energy transfer mechanism, carrier trap effect and the movement of carrier recombination zone in EML, resulting in a meaningful concept to design high CRI WOLEDs in different application scene.
机译:通过不同的发射极顺序排列(正发射极顺序:BGOR,反向发射极顺序)研究了具有双极间隔层的高显色指数(CRI)和无掺杂四发光层(EML)白色橙色发光二极管(WOLED) :ROGB)。当电压增加时,所得具有不同序列的四发光层WOLED显示相反的CRI趋势,包括B-G-O-R序列的下降趋势和R-O-G-B序列的上升趋势。这导致具有不同序列的WOLED在明显不同的亮度下显示出最高的CRI,分别为B-G-O-R序列中的CRI为86 @ 531 cd m(-2)和R-O-G-B序列中的CRI为87 @ 13340 cd m(-2)。同时,B-G-O-R和R-O-G-B序列设备在功率效率上也表现出差异。通过结合能量转移机理,载流子陷阱效应和EML中载流子复合区的运动,对CRI的不同表现形式和效率特性进行了细致的分析,从而为在不同应用场景下设计高CRI WOLED提供了有意义的概念。

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