Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

W. D. Hu; X. S. Chen; Z. H. Ye; C. Lin; F. Yin; W. Lu

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Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

机译：HgCdTe双色红外光电异质检测器的数值分析

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摘要

We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.

机译：我们报告了两色HgCdTe红外光电探测器光谱光响应特性的二维数值模拟。研究了吸收层厚度和掺杂分布对光响应，量子效率和串扰的影响。数值计算吸收层的最佳厚度和掺杂分布。

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来源
《Optical and quantum electronics》 |2009年第9期|P.699-704|共6页
作者
W. D. Hu; X. S. Chen; Z. H. Ye; C. Lin; F. Yin; W. Lu;
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作者单位

National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083 Shanghai, China;

rnNational Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083 Shanghai, China;

rnKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu Tian Road, 200083 Shanghai, China;

rnKey Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu Tian Road, 200083 Shanghai, China;

rnNational Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083 Shanghai, China;

rnNational Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083 Shanghai, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
numerical simulation; design; two-color HgCdTe infrared photodiode; spectral photoresponse;

机译：数值模拟设计;HgCdTe二色红外光电二极管;光谱光响应;

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专利

1. Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector [J] . W. D. Hu, X. S. Chen, Z. H. Ye, Optical and Quantum Electronics . 2009,第9期

机译：HgCdTe双色红外光电异质检测器的数值分析
2. Numerical Analysis of HgCdTe Simultaneous Two-Color Photovoltaic Infrared Detectors [J] . Enrico Bellotti, Danilo DOrsogna IEEE Journal of Quantum Electronics . 2006,第4期

机译：HgCdTe同时双色光伏红外探测器的数值分析
3. An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector [J] . Wei-Da Hu, Xiao-Shuang Chen, Zhen-Hua Ye, Semiconductor science and technology . 2010,第4期

机译：异质结构HgCdTe双色红外探测器短波长光响应的改进
4. Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector [C] . Hu W. D., Chen X. S., Yin F., Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009 . 2009

机译：HgCdTe双色红外光电异质检测器的数值分析
5. Numerical Simulation and Data-Driven Analysis of Infrared Detector Performance [D] . Glasmann, Andreu. 2020

机译：红外检测器性能的数值模拟与数据驱动分析
6. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector [O] . Haoyang Cui, Yongpeng Xu, Junjie Yang, 2013

机译：金属-半导体接触对HgCdTe光伏探测器的瞬态光伏特性的影响
7. Numerical analysis of HgCdTe dual-band infrared detector [O] . M. Kopytko, W. Gawron, A. Kębłowski, 2019

机译：HGCDTE双频红外检测器的数值分析
8. MBE Growth and Characterization of HgCdTe Heterostructures for Multi- Spectral Infrared Focal Plane Arrays [R] . Shih, H. D. , Bevan, M. J. , Dodge, J. A. , 1998

机译：多光谱红外焦平面阵列的mBE生长和HgCdTe异质结构表征

Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector

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