Transmission and tunneling time characteristics in light propagation through anisotropic double semiconductor layered structure

摘要

We considered electromagnetic wave propagating through double semiconductor layered structure with anisotropic permittivity. A model which allows the analysis of the permittivity is provided. Transmission, reflection and absorption characteristics of the structure were analyzed in frequency span of interest. Expressions for the dwell time and group delay were obtained for the considered barrier system and their values discussed. A relation which links dwell time with group delay is derived. The appearance of Hartman effect was confirmed.