1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors

摘要

The empirical 1/f noise model for p~+-p-n infrared detector made of type-Ⅱ InAs/ GaSb superlattice material is presented. It is shown that 1/f noise magnitude can be accurately estimated if dark current contributions are determined and noise coefficients are known. It is found that the shunt, the bulk generation-recombination, and the trap-assisted tunneling currents contribute to the total 1/f noise. No 1/f noise connected with the diffusion and the band-to-band tunneling currents is observed.