Molecular dynamics simulations of surface modification and damage formation by gas cluster ion impacts

摘要

Damage formation process by gas cluster impact was studied using molecular dynamics simulations. Ar gas clusters with various sizes (several tens to several thousand) and energies (several to several tens keV, totally) were irradiated on Si substrates. The relationship between mean damage depth, incident energy and cluster size was examined and the model and conditions to cause damage by cluster impact were discussed.