Monte Carlo simulation of the CENBG microbeam and nanobeam lines with the Geant4 toolkit

摘要

A single-ended HVEE~® 3.5 MV Singletron electrostatic accelerator has been installed since October 2005 at the Centre d'Etudes Nucleaires de Bordeaux-Gradignan (CENBG) in France. This facility is equipped with a microbeam line dedicated to ion beam analysis (scanning transmission ion microscopy - STIM, particle induced X-ray emission - PIXE, Rutherford back scattering) and cellular irradiation in single event mode. A high demagnification nanobeam line will be installed on the same facility in the near future. This paper focuses on the simulation of the microbeam and nanobeam lines performances using the Geant4 Monte Carlo simulation toolkit. Comparisons with experimental data collected on the microbeam line are presented.