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Development of spin-polarized slow positron beam using a ~(68)Ge-~(68)Ga positron source

机译:〜(68)Ge-〜(68)Ga正电子源发展自旋极化慢正电子束

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A (68)~Ge-(68)~Ga positron source was produced from the ~(69)Ga(p,2n) ~(68)Ge nuclear reaction by irradiating a GaN substrate with 20 MeV protons. Fast positrons from the source were converted to slow positrons using tungsten meshes and foils and were then electrostatically transported to the sample chamber. The spin polarization of the positron beam was determined as 47 ± 8% from the magnetic field dependence of the para-positronium intensity in fused silica. The Doppler broadening of the annihilation radiation spectra of polycrystalline Fe showed asymmetry upon field reversal. The spin-polarized positron beam generated by the ~(68)Ge-~(68)Ga source may be applicable to study the magnetic properties associated with surfaces, interfaces, and thin films.
机译:通过用20 MeV质子辐照GaN衬底,由〜(69)Ga(p,2n)〜(68)Ge核反应产生(68)〜Ge-(68)〜Ga正电子源。使用钨网和金属箔将来自源的快正电子转换为慢正电子,然后将其静电传输到样品室。根据熔融石英中对正电子强度的磁场依赖性,确定正电子束的自旋极化为47±8%。多晶铁的an灭辐射光谱的多普勒展宽在场反转时显示出不对称性。 〜(68)Ge-〜(68)Ga源产生的自旋极化正电子束可能适用于研究与表面,界面和薄膜相关的磁性能。

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