Evolution of optical absorption and strain in LiTaO_3 crystal implanted by energetic He-ion

摘要

Z-cut LiTaO_3 single crystal wafers were implanted at room temperature by 100-500 keV He-ion, to flu-ences in the range from 1.0 × 10~(15) to 1.0 × 10~(17) ions/cm~2. The implanted samples were characterized by UV/VIS/NIR Spectrometer, and XRD technique. Optical absorption occurred in all implanted LiTaO_3, but to different extent Optical absorption apparently depends on both the fluence and energy of ions. The damage caused by ion implantation in LiTaO_3 is not the only factor for the optical absorption. XRD measurement shows that there is also a large implantation induced strain in the samples which have strong optical absorption. And the release of strain is always companied by the recovery of optical absorption. Stress might play an important role in the optical absorption.