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Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

机译:快速重离子辐照SnO_2薄膜传感器,可有效检测SO_2气体

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摘要

Gas sensing response studies of the Ni~(7+) ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 ℃ to 60 ℃) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni~(7+) ions.
机译:对在相同条件下制备的Ni〜(7+)离子辐照(100 MeV)和未辐照的SnO_2薄膜传感器进行了气敏响应研究,研究了其对SO_2气体(500 ppm)的响应。研究了辐照对基于SnO_2薄膜的传感器的结构,表面形态,光学和气体传感特性的影响。辐照后的样品观察到工作温度显着降低(从220℃降低到60℃)和增强的传感响应(从1.3降低到5.0)。基于辐照的SnO_2薄膜传感器获得的增强的传感响应归因于Ni〜(7+)离子对SnO_2薄膜的表面形貌和材料性能的所需修饰。

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