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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Effects of different TMS and TMG flow rate on the content of elements in the fabrication of GDP target
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Effects of different TMS and TMG flow rate on the content of elements in the fabrication of GDP target

机译:不同TMS和TMG流量对GDP目标制定中元素含量的影响。

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摘要

Inertial confinement fusion (ICF) is one of the important science domains which are developing quickly in the present world and capsule structure is employed as the thermonuclear reaction fuel container. At present, germanium-doped glow discharge hydrocarbon polymer (GDP) and silicon-doped GDP are chosen as the most common used outer spherical shell of ignition target. The content of doping elements and the amount of Oxygen mixed into the material during preparation are considered to be two of the factors which may influence the results of ICF ignition experiments.In this paper, one set of germanium-doped GDP fabricated by different volume flow rate of tetra-methylgermanium (TMG) and another set of silicon-doped GDP fabricated by different volume flow rate of tetramethylsiane (TMS) are used as samples. The element content of the GDP thin film is analyzed by ion beam analysis method. In the work, the ratio of carbon, oxygen and doping elements has been measured. It is found that the content of doping elements (Ge or Si) in the material increases linearly with the flow rate of TMS and TMG. The growth rate of doping elements in Si doped samples is higher than that of Ge doped samples. The content of to in the samples also increased with the increase of TMS/TMG flow rate. This work provides a reference for capsule manufacture technology to fabricate the optimized GDP materials with certain range of concentration of dopants and oxygen for ICF ignition experiments.
机译:惯性约束聚变(ICF)是当今世界发展迅速的重要科学领域之一,胶囊结构被用作热核反应燃料容器。目前,选择掺锗的辉光放电烃聚合物(GDP)和掺硅的GDP作为点火靶最常用的球形外壳。制备过程中掺杂元素的含量和材料中掺入的氧气量是影响ICF点火实验结果的两个因素。本文采用不同体积流量制备了一组掺杂锗的GDP。以四甲基锗烷(TMS)的体积比和由不同体积的四甲基硅烷(TMS)流速制造的另一组硅掺杂的GDP用作样品。用离子束分析法分析GDP薄膜中的元素含量。在这项工作中,已经测量了碳,氧和掺杂元素的比例。已经发现,材料中掺杂元素(Ge或Si)的含量随TMS和TMG的流速线性增加。 Si掺杂样品中掺杂元素的生长速率高于Ge掺杂样品中的掺杂元素的生长速率。样品中to的含量也随着TMS / TMG流速的增加而增加。这项工作为胶囊制造技术提供参考,以制造具有一定浓度范围的掺杂剂和氧气的优化GDP物质用于ICF点火实验。

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  • 作者单位

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

    China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China;

    China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China;

    China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China;

    Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    GDP film; TMS and TMG volume flow rate; Doping elements;

    机译:GDP薄膜;TMS和TMG体积流量;掺杂元素;

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