Characterization of CdTe crystals grown by the Vertical Bridgman method

摘要

CdTe crystals have been grown by the Vertical Bridgman method with diameters of 25, 45 and 75 mm. Improvements of the crystallinity could be achieved by reduction of twins and growth of large single crystalline grains up to 40 x 40 mm~2. CdTe:Ge has been grown with resistivities up to 2 x 10~(10) Ωcm . The samples showed a mobility-lifetime product of 5.7 x 10~(-5) for holes.