Progress in fabrication of high quality tantalum film absorber for STJ radiation detector

摘要

We report the fabrication and characterization of high quality tantalum films as absorbers for STJ radiation detectors. Values of the residual resistance ratio up to 75 and bulk value of the superconducting transition temperature T_c = 4.5 +- 0.1 K have been achieved. Devices for detection with lateral aluminum superconducting tunnel junctions have been fabricated on such films. The detector response to X-ray is discussed.