Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor

摘要

Schottky and pn junction detectors were fabricated with p-InSb. Fabrication methods, energy spectra of ~(241)Am alpha particles and rise times are shown. We could observe pulses at operating temperatures up to 77 and 115K for the Schottky and the pn junction detectors, respectively.