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Design of a low emittance electron gun with GV/m high field

机译:具有GV / m高场的低发射电子枪的设计

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The design of the electron gun for generating a low-emittance beam is presented. This gun employs a diode for generating the beam and a 1.6-cell RF cavity for accelerating up to relativistic energies. The goal of this gun is to generate a beam of ≈ 1 nC and 100 A peak current with a normalized rms transverse emittance of below 1π μm. In the diode region, pulsed voltage with a pulse duration of ≈ 1 ns and voltage of 2 MV is applied to the 2-mm-gap between cathode and anode, generating a field gradient of ≈ 1 GV/m. The combination of the high-field diode and the RF cavity can reduce space charge effects on emittance to a greater extent than an RF gun and solenoid field system. A Cs-Te was selected to match the requirement of a photocathode with high quantum efficiency (QE) since the laser power available to us at KEK-ATF gives ≈ 5 μJ/pulse at a UV wavelength of 266 nm. A diamond is used for the substrate to allow UV light to be injected from the back of the cathode. To estimate the generated beam emittance, a simulation was performed using the general particle tracer (GPT) code. Details of the design and simulations are presented.
机译:介绍了用于产生低发射束的电子枪的设计。该枪采用了一个二极管来产生光束,并使用一个1.6单元的RF腔来加速至相对论能量。该枪的目标是产生≈1 nC的光束和100 A的峰值电流,且归一化均方根横向发射率低于1πμm。在二极管区域中,将脉冲持续时间≈1 ns的脉冲电压和2 MV的电压施加到阴极和阳极之间的2 mm间隙,从而产生≈1 GV / m的场梯度。与射频枪和电磁场系统相比,高场二极管和射频腔的组合可以更大程度地减少空间电荷对发射的影响。选择Cs-Te以匹配具有高量子效率(QE)的光电阴极的要求,因为在266 nm的UV波长下,我们在KEK-ATF处可获得的激光功率为≈5μJ/脉冲。将金刚石用于基材,以允许从阴极背面注入紫外线。为了估计所产生的束发射率,使用通用粒子跟踪器(GPT)代码进行了仿真。介绍了设计和仿真的详细信息。

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