Transport of the charge carriers in SiC-detector structures after extreme radiation fluences

摘要

The charge collection efficiency (CCE) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 10~(14) cm~(-2) was investigated. Nuclear spectrometric techniques were employed, with 5.4 MeV alpha particles used to test the detectors. A concentration of primarily created defects of 4 x 10~(16) cm~(-3) was estimated and deep compensation of SiC conductivity was observed. In order to obtain a more uniform electric field distribution across the detectors, it is suggested to connect the structure in the forward direction. The experimental data obtained are processed using a simple model of signal formation. The model makes it possible to separate the contributions of the electrons and holes to the CCE.