Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment

摘要

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 μm along the CMS r-φ plane can be achieved after an irradiation fluence of 5.9 x 10~(14) n_(eq)/cm~2. In addition, we show that systematic errors in the position determination can be largely reduced by applying η corrections.