Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

摘要

The new SuperLHC upgrade will impose severe restrictions on the radiation hardness of silicon detectors since a maximum fluence of 10~(16) particles/cm~2 is foreseen in the innermost region. Microstrip detectors have been fabricated in p-type high resistivity float zone silicon at CNM facilities, been irradiated at the TRIGA reactor in Ljubljana to a fluence of 10~(16) neutrons/cm~2 and characterized at IFIC laboratory. The total collected charge before and after irradiation in the detectors has been measured by ~(90)Sr beta source and by infrared laser illumination. The results show that even after this extreme radiation fluence, p-type substrate detectors collect 3500 electrons when biased at 800 V, which is enough charge to induce a measurable signal with standard readout electronics. P-type strip detectors could be suitable for the middle and even inner regions of sLHC.