Performance updating of CdZnTe strip-drift detectors

摘要

Efficiency of strip-drift structure of contacts for improvement of charge collection conditions in CdZnTe detectors was shown some years ago. For such detector with area 10 x 10 mm~2 and thickness 3 mm of crystal, produced by eV products we obtained energy resolution 1.9 and 12.0 keV on energies 59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm~3 produced by Yinnel Tech company. Results of crystal input characterization, the value of leakage current and inter-strip resistivity for all strips and energy resolution for collecting strips of detector are presented. The energy resolutions 1.8 and 11.0 keV on energies 59.6 and 662 keV correspondingly were obtained although the thickness of detector was two times more than earlier.