A stacked CdTe pixel detector for a compton camera

摘要

We are developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60 keV. For energies above several hundred keV, in contrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV. The angular resolution obtained at 511 keV is measured to be 12.2° (FWHM).