机译:沉积温度对射频磁控溅射Cd_(1-x)Zn_xTe薄膜结构和物理性能的影响
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, PR China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, PR China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, PR China;
Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, PR China;
Cd_(1-x)Zn_xTe films; RF magnetron sputtering; deposition temperature; XRD; AFM;
机译:溅射功率对射频磁控溅射沉积Cd_(1-x)Zn_xTe薄膜性能的影响
机译:射频功率和沉积温度对射频磁控溅射制备的Mg_4Ta_2O_9薄膜的结构和电性能的影响
机译:溅射参数对射频磁控溅射沉积方法制备的TiO_2薄膜物理性能和光催化活性的影响
机译:沉积退火温度对RF磁控溅射制备的ZnO膜性能的影响
机译:脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
机译:前驱体C2H2分数对磁控溅射沉积制备的含Si和Ag的非晶碳复合膜的组织和性能的影响
机译:在不同沉积温度下RF-磁控溅射制备的ZnO纳米结构的结构,光学和UV光响应性的退火效应