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首页> 外文期刊>Nuclear instruments and methods in physics research >Studies on multiplication effect of noises of PPDs, and a proposal of a new structure to improve the performance
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Studies on multiplication effect of noises of PPDs, and a proposal of a new structure to improve the performance

机译:对PPD噪声的乘积效应进行研究,并提出一种改善性能的新结构的建议

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Pixelated Photon Detectors (PPDs) are arrayed APDs operated in Geiger-mode. Multi-Pixel Photon Counter (MPPC) is a PPD produced by Hamamatsu Photonics K.K. Test of dark noise rate of a 1600 pixel MPPC as a function of over-voltage at room temperature indicates that the over-voltage is limited up to a few volts because of explosive increase of noise rate. The over-voltage dependence of random noise rate is nevertheless mostly linear. We confirmed this is due to multiplication effect of noises because of after-pulsing and crosstalk. Over-voltage dependence of random noise and photon detection efficiency are qualitatively different. Considering the electric field structure of MPPC (p-on-n type) and Geiger-efficiency as a function of the position of initial pair creation, these characteristics are possible to be understood. One suggestion for p-on-n type PPD from these results is narrowing the depletion layer below the multiplication layer to reduce random noise and after-pulsing. Another proposal is to put additional buffer capacitance parallel to the diode to accomplish higher gain with lower over-voltage simultaneously with lower noise rate.
机译:像素化光子检测器(PPD)是在盖革模式下运行的阵列APD。多像素光子计数器(MPPC)是Hamamatsu Photonics K.K生产的PPD。在室温下测试1600像素MPPC的暗噪声率与过电压的关系,结果表明,由于噪声率的爆炸性增长,该过电压限制在几伏。但是,随机噪声速率对过电压的依赖性大多是线性的。我们确认这是由于后脉冲和串扰引起的噪声的倍增效应。随机噪声的过电压依赖性和光子检测效率在质量上是不同的。考虑到MPPC的电场结构(p-on-n型)和盖革效率与初始对生成位置的关系,可以理解这些特性。从这些结果得出的P-on-n型PPD的一个建议是将耗尽层缩小到乘法层以下,以减少随机噪声和后脉冲。另一建议是将额外的缓冲电容与二极管并联,以在较低的过电压和较低的噪声率的同时实现较高的增益。

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