~(60)Co γ-irradiation effects on electrical properties of a rectifying diode based on a novel macrocyclic Zn octaamide complex

摘要

C_(36)H_(28)N_(12)O_8ZnCl_2 · 9/2H_2O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using ~1H NMR, ~(13)C NMR, IR, UV-vis and LC-MS spectroscopic methods. The Sn/ZnOA-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under ~(60)Co γ-source at room temperature. Characteristic parameters of the diode were determined from its current-voltage (I-V) and capacitance voltage (C-V) measurements before and after irradiation. It was observed that γ-irradiation had clear effects on I-V and C-V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased.