Performance of focusing mirror device in EUV beamline of SPring-8 Compact SASE Source (SCSS)

摘要

A focusing mirror device was designed and installed in an extreme ultraviolet (EUV) beamline of the SPring-8 Compact SASE Source (SCSS). The horizontal and vertical sizes of the beam at the focal point were measured to be 22 and 26 μm with a working distance of 0.94 m at a wavelength of 60 nm. A high power density over 20 TW/cm2 was achieved. Ablation properties of some materials such as silicon, diamond and tantalum have been studied for determining the focused beam profile with a single shot irradiation.