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Preparation of electric contacts on semi-insulating cadmium telluride

机译:半绝缘碲化镉电触点的制备

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摘要

The effect of surface treatment in various etching solutions with subsequent depositions of different metals (Au, Pt, In) is studied on semi-insulating CdTe. Properties of the contacts are investigated by the current-voltage characteristics measurements using three-terminal technique. We show that thermal deposition of In on the surface treated in Hi-solution results in the best electric contacts for semi-insulating n-type CdTe. Chemically deposited gold in combination with treatment in HBr-solution proves to be the best on p-type material.
机译:在半绝缘的CdTe上研究了在各种蚀刻溶液中进行表面处理以及随后沉积不同金属(Au,Pt,In)的效果。通过使用三端子技术的电流-电压特性测量来研究触点的特性。我们表明,在Hi-solution处理过的表面上In的热沉积会导致半绝缘n型CdTe的最佳电接触。化学沉积的金与在HBr溶液中处理相结合被证明是对p型材料最好的。

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  • 来源
    《Nuclear Instruments & Methods in Physics Research》 |2011年第maysuppla期|p.S89-S91|共3页
  • 作者单位

    Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, CZ-121 16, Czech Republic;

    Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, CZ-121 16, Czech Republic;

    Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, CZ-121 16, Czech Republic;

    Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, CZ-121 16, Czech Republic;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    cdte; chemical etching; electrical contacts; detectors;

    机译:cdte;化学蚀刻电触点;探测器;

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